JPS6084814A - Ｘ線投射装置 - Google Patents
Ｘ線投射装置Info
- Publication number
- JPS6084814A JPS6084814A JP58112310A JP11231083A JPS6084814A JP S6084814 A JPS6084814 A JP S6084814A JP 58112310 A JP58112310 A JP 58112310A JP 11231083 A JP11231083 A JP 11231083A JP S6084814 A JPS6084814 A JP S6084814A
- Authority
- JP
- Japan
- Prior art keywords
- intensity distribution
- square
- reflected
- uniform
- travelling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009826 distribution Methods 0.000 claims abstract description 23
- 230000005469 synchrotron radiation Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 7
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 6
- 238000009827 uniform distribution Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Particle Accelerators (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112310A JPS6084814A (ja) | 1983-06-22 | 1983-06-22 | Ｘ線投射装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112310A JPS6084814A (ja) | 1983-06-22 | 1983-06-22 | Ｘ線投射装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6084814A true JPS6084814A (ja) | 1985-05-14 |
| JPH0436360B2 JPH0436360B2 (en]) | 1992-06-15 |
Family
ID=14583471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58112310A Granted JPS6084814A (ja) | 1983-06-22 | 1983-06-22 | Ｘ線投射装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6084814A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH025334A (ja) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Ｘ線装置 |
| EP0357425A2 (en) | 1988-09-02 | 1990-03-07 | Canon Kabushiki Kaisha | An exposure apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034702U (en]) * | 1973-07-27 | 1975-04-14 |
-
1983
- 1983-06-22 JP JP58112310A patent/JPS6084814A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034702U (en]) * | 1973-07-27 | 1975-04-14 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH025334A (ja) * | 1988-06-23 | 1990-01-10 | Toshiba Corp | Ｘ線装置 |
| EP0357425A2 (en) | 1988-09-02 | 1990-03-07 | Canon Kabushiki Kaisha | An exposure apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0436360B2 (en]) | 1992-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5222112A (en) | X-ray pattern masking by a reflective reduction projection optical system | |
| US8164046B2 (en) | Illumination system for illuminating a mask in a microlithographic projection exposure apparatus | |
| TWI653508B (zh) | 微影系統 | |
| KR20010089153A (ko) | 극자외선 리소그래피 콘덴서의 회절 소자 | |
| JPH02142111A (ja) | 照明方法及びその装置並びに投影式露光方法及びその装置 | |
| US4496222A (en) | Apparatus and method for photolithography with phase conjugate optics | |
| JP5674197B2 (ja) | 近接露光装置及び近接露光方法 | |
| KR920001171B1 (ko) | X선 노출 장치 | |
| US5127029A (en) | X-ray exposure apparatus | |
| JPS6084814A (ja) | Ｘ線投射装置 | |
| KR0179297B1 (ko) | 반도체 노광 장치 | |
| JPH0196600A (ja) | Ｘ線露光装置 | |
| US20100123888A1 (en) | Exposure apparatus and method of manufacturing device | |
| JP4791630B2 (ja) | 露光装置 | |
| JP3452057B2 (ja) | レーザ光の高調波発生装置、及びそれを用いた露光装置、並びにレーザ光の高調波発生方法、及びそれを用いた露光方法、それを用いたデバイス製造方法 | |
| JP4100038B2 (ja) | 露光方法および露光装置 | |
| JP3316752B2 (ja) | 走査露光方法、走査型露光装置、及び前記方法を用いるデバイス製造方法 | |
| US7023523B2 (en) | Exposure system and exposure method | |
| JP2731959B2 (ja) | Ｘ線露光装置 | |
| JP2980397B2 (ja) | Ｘ線露光装置 | |
| JPH0246717A (ja) | Ｘ線露光方法 | |
| WO2014077405A1 (ja) | 照明光学系及び照明方法、並びに露光方法及び装置 | |
| JPS6340316A (ja) | 半導体製造装置 | |
| JP3013341B2 (ja) | Ｘ線照射用光学系及びそれを用いたｘ線投影露光装置 | |
| JPH01244400A (ja) | 露光装置 |